首页> 外国专利> INSULATING LAYER, ORGANIC THIN FILM TRANSISTOR USING THE INSULATING LAYER, AND METHOD OF FABRICATING THE ORGANIC THIN FILM TRANSISTOR

INSULATING LAYER, ORGANIC THIN FILM TRANSISTOR USING THE INSULATING LAYER, AND METHOD OF FABRICATING THE ORGANIC THIN FILM TRANSISTOR

机译:绝缘层,使用该绝缘层的有机薄膜晶体管以及制造有机薄膜晶体管的方法

摘要

Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
机译:提供一种绝缘层,其中将无机材料添加到有机聚合物中以由此改善绝缘性能,使用该绝缘层的有机薄膜晶体管,以及制造该有机薄膜晶体管的方法。提供了一种用于有机薄膜晶体管的绝缘层,该绝缘层包括乙烯基聚合物和无机材料。在此,乙烯基聚合物与无机材料的重量比可以在1:0.0001至1:0.5的范围内。因此,可以在低温下制造薄膜,并且还可以制造具有高介电常数的绝缘层,该绝缘层不影响在绝缘层形成期间在先前工艺中形成的其他层。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号