Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

摘要

We demonstrate reversible carrier density control across the Dirac point (Δn ∼ 1013 cm−2) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.