The proximity of the strain induced effect to improve the electron mobilityrnin a silicon-carbon source-drain structure of n-channel metal-oxidesemiconductorrnfield-effect transistors

摘要

The source/drain in an n-channel metal-oxide-semiconductor field-effect transistor u0001nMOSFETu0002rnwith solid phase epitaxial u0001SPEu0002 implanted Si:C before the spacer formation is proposed. Comparedrnto the conventional nMOSFET with SPE implanted Si:C after the spacer formation, it brings inrnproximity to the device channel and shows great improvement of electron mobility via the strongerrntensile strain effect. Experimental measurements showed that the electron mobility in the proposedrnprocess is increased by 105% over that of the control devices. At a gate length of 40 nm, an increasernof more than 67% for the drain current, comparing to those of the conventional Si:C source/drainrnnMOSFET, has been achieved