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Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stage
Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stage
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机译:包括高K金属栅电极结构和在后期形成的嵌入式应变感应半导体合金的晶体管
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摘要
In sophisticated semiconductor devices, replacement gate approaches may be applied in combination with a process strategy for implementing a strain-inducing semiconductor material, wherein superior proximity of the strain-inducing semiconductor material and/or superior robustness of the replacement gate approach may be achieved by forming the initial gate electrode structures with superior uniformity and providing at least one cavity for implementing the strained channel regions in a very advanced manufacturing stage, i.e., after completing the basic transistor configuration.
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