InGaSb photodetectors using an InGaSb substrate for 2 mu m applications

摘要

Detectors operating at 2 mum are important for several applications including optical communication and atmospheric remote sensing. In this letter, fabrication of 2 mum photodetectors using an InGaSb substrate is reported. The ternary substrates were grown using vertical Bridgmann technique and Zn diffusion was used to fabricate p-n junction diodes and photodiodes. Dark current measurement reveals that the breakdown voltage is in the 0.75 to 1 V range. Spectral response measurements indicated a 2 mum responsivity of 0.56 A/W corresponding to 35% quantum efficiency. Photodiode performance was compared to similar devices fabricated on binary substrates. (C) 2004 American Institute of Physics.