InAs/InGaSb Photodetectors Grown on GaAs Bonded Substrates

摘要

The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cutoff wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates.