Comparison of InGaSb/InAs Superlattice Structures Grown by MBE on GaSb, GaAs, and Compliant GaAs Substrates

摘要

This paper contains the characterization results for indium arsenide/indium gallium antimonide (InAs/InGaSb) superlattices (SL) that were grown by molecular beam epitaxy (MBE) on standard gallium arsenide (GaAs), standard GaSb, and compliant GaAs substrates. The atomic force microscopy (AFM) images, peak to valley (P-V) measurement, and surface roughness (RMS) measurements are reported for each sample. For the 5 μm×5 μm images, the P-V heights and RMS measurements were 37 A and 17 A, 12 A and 2 A, and 10 A and 1.8 A for the standard GaAs, standard GaSh, and compliant GaAs respectively. The high resolution x-ray diffraction (HRXRD) analysis found different 0th order SL peak to GaSb peak spacings for the structures grown on the different substrates. These peak separations are consistent with different residual strain states within the SL structures. Depending on the constants used to determine the relative shift of the valance and conduction bands as a function of strain for the individual layers, the change in the InAs conduction band to InGaSb valance band spacing could range from +7 meV to -47 meV for a lattice constant of 6.1532 A. The cutoff wavelength for the SL structure on the compliant GaAs, control GaSb, and control GaAs was 13.9 μm, 11 μm, and no significant response, respectively. This difference in cutoff wavelength corresponds to approximately a -23.meV change in the optical gap of the SL on the compliant GaAs substrate compared to the same SL on the control GaSb substrate.