Method for manufacturing a InGaSb thin film on a silicon substrate

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a high quality compound semiconductor crystal having a lattice constant different from that of silicon on a silicon substrate.;SOLUTION: A method for forming an InGaSb thin film on a silicon substrate comprises: a step for growing a first buffer layer 302 consisting of graphite-like boron nitride thin film on a sapphire substrate 301; a step for growing a second buffer layer 303 consisting of a compound semiconductor containing Al on the first buffer layer 302; a step for growing an InGaSb thin film 304 on the second buffer layer 303; and a step for separating a part of the first buffer layer 302 and the InGaSb thin film 304 from the first buffer layer 302 mechanically and for transferring the InGaSb thin film 304 onto a silicon substrate.;COPYRIGHT: (C)2015,JPO&INPIT