Epitaxial Growth of InGaSb Layers on GaAs Substrates for Fabrication of InGaSb-based THz-QCLs

摘要

We propose InGaSb-well-based THz-QCLs for higher temperature operation. For the preparation of the MBE growth of the InGaSb-well-based QCLs, we optimize growth conditions of InGaSb layers on a GaAs substrate with introducing an In_xGar_1-xSb graded buffer layer.