InGaSb laminated structure substrate for bonding

摘要

PROBLEM TO BE SOLVED: To provide an InGaSb multilayer structure substrate for lamination, allowing a high-quality InGaSb layer to be transferred on a Si substrate at a wafer level.SOLUTION: A multilayer structure is obtained by forming a carbon-doped AlSb layer 102 on a GaSb substrate 101 and by forming an InGaSb crystalline layer 103 on the carbon-doped AlSb layer. The carbon-doped AlSb layer has a carbon doping concentration of 2.2×10/cmor higher and 7.4×10/cmor lower. The InGaSb crystalline layer has an In composition of 0 or more and 0.3 or less. The carbon-doped AlSb layer may have a thickness of 100 nm or more and 500 nm or less.