Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)

摘要

The epitaxial growth of pentacene on hydrogen-terminated Si(111) is reported. Reflection high energy electron diffraction (RHEED) revealed that the crystal packing resembles that in the bulk crystal even at a monolayer thickness, which was maintained in multilayers. A ripening effect was clearly observed by atomic force microscopy (AFM). These results are important to obtain oriented crystalline films of pentacene combined with silicon microdevices with reduced defect densities.