Nanoscale Heat Transport through Epitaxial Ultrathin Hetero Films: Bi(111)/Si(001) and Bi(111)/Si(111)

摘要

The cooling process of ultrathin hetero films upon excitation with short laser pulses was studied for epitaxial Bi(111) films on Si(001) and Si(111) substrates by means of the Debye-Waller effect with ultrafast electron diffraction. From the exponential decay of the temperature, a cooling time constant was determined as a function of thickness for both substrates. For Bi/Si(111), a linear dependence between the decay constant and thickness was observed, even for 2.8 nm thin films, as predicted from the diffuse mismatch model (DMM) and the acoustic mismatch model (AMM). However, with Bi/Si(001), a significant deviation from this linear dependence was observed for film thicknesses below 5 nm.