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机译:等时退火在Si(111)上形成高质量的Bi(111)外延膜
Department of Physics and Center for Nanointegration (CENIDE), University Duisburg - Essen, Lotharstrasse I, 47057 Duisburg, Germany;
Department of Physics and Center for Nanointegration (CENIDE), University Duisburg - Essen, Lotharstrasse I, 47057 Duisburg, Germany;
Department of Physics and Center for Nanointegration (CENIDE), University Duisburg - Essen, Lotharstrasse I, 47057 Duisburg, Germany;
Department of Physics and Center for Nanointegration (CENIDE), University Duisburg - Essen, Lotharstrasse I, 47057 Duisburg, Germany;
Department of Physics and Center for Nanointegration (CENIDE), University Duisburg - Essen, Lotharstrasse I, 47057 Duisburg, Germany;
Department of Physics and Center for Nanointegration (CENIDE), University Duisburg - Essen, Lotharstrasse I, 47057 Duisburg, Germany;
Department of Physics and Center for Nanointegration (CENIDE), University Duisburg - Essen, Lotharstrasse I, 47057 Duisburg, Germany;
epitaxy; strain; annealing; bismuth; silicon;
机译:高质量的外延Cu2O薄膜(111) - 通过快速热氧化从单晶Cu(111)薄膜获得的百分比高原晶粒
机译:(111)Cu /(111)HfN双层膜在(111)Si上的顺序外延生长和(111)HfN膜的扩散阻挡性能
机译:(111)Cu /(111)HFN双层膜的顺序外延生长(111)Si和(111)HFN膜的扩散阻隔性
机译:纳米级热传输通过外延超薄杂膜:Bi(111)/ Si(001)和Bi(111)/ Si(111)
机译:银(001)和银(111)上超薄外延铬和氧化铁膜的生长和结构:通过X射线光电子衍射和低能电子衍射完成的综合研究。
机译:在3C-SiC(111)/ Si(111)基板上进行ZnO(002)薄膜的RF溅射退火后处理和表征
机译:在Si(111)上生长的外延Ce $ _ {{1-x} $ Pr $ _ {{x} $ O $ _ {2- \ delta} $薄膜的沉积后退火
机译:在(111)Cu上形成的外延(111)pd膜