Effect of double-sided (Pb_(0.72)La_(0.28))Ti_(0.93)O_3 buffer layers on the ferroelectric properties of Pb(Zr_(0.52)Ti_(0.48))O_3 thin films

摘要

We deposited the Pb(Zr_(0.52)Ti_(0.48))O_3 (PZT) thin films with single and double-sided (Pb_(0.72)Lao_(0.28))Ti_(0.93)O_3 (PLT) buffers by using a pulsed-laser deposition method. With the PLT buffer layers, the remanent polarization values increased, and a remanent polarization value of 33.4 μC/cm~2 was obtained when 10-nm-thick double-sided PLT buffer layers were used. While the coercive field of films slightly increased only with a single-sided PLT buffer, it decreased again by adding the top PLT buffer layer. The film with double-sided PLT buffer also exhibited good fatigue endurance after 10~9 switching cycles even without oxide electrodes, mainly because the accumulated charges were compensated at the interface junction between the PLT buffer layer and the electrode.