Surface Strain And Its Impact On The Electrical Resistivity Of Gan Channel In Algan/gan High Electron Mobility Transistor

摘要

Localized strain in AlGaN/GaN high electron mobility transistor (HEMT) device structures was studied by high resolution x-ray diffraction and rocking curve measurements, and the results were compared with the corresponding channel sheet resistance measurements. The map of in-plane tensile strain on the HEMT wafer showed a near one-to-one correspondence with the electrical resistivity. The in-plane strain variation in the range of (2.295-3.539) × 10~(-4) resulted in a corresponding sheet resistance variation between 345 and 411 Ω/□.