Carrier transport mechanisms of nonvolatile memory devices based on nanocomposites consisting of ZnO nanoparticles with polymethylmethacrylate nanocomposites sandwiched between two C_(60) layers

摘要

Transmission electron microscope images showed that ZnO nanoparticles were formed in a polymethylmethacrylate (PMMA) layer. Current-voltage (/-V) curves for the Al/C_(60)/ZnO nanoparticles embedded in the PMMA layer/C_(60)/indium tin oxide (ITO) device at 300 K showed a current bistability with a large on/off ratio of 10~4, which was much larger than the on/off ratio of the device without C_(60) layers, indicative of significant enhancement of memory storage. Carrier transport mechanisms of the memory effects for the Al/C_(60)/ZnO nanoparticles embedded in the PMMA layer/C_(60)/ITO device are described on the basis of the I-V results.