Nonvolatile resistive memory device based on polyimide/graphene oxide nanocomposite

摘要

The present invention relates to a resistance change memory device comprising: a substrate (104); a lower electrode layer (103) formed on the substrate; a resistance change material layer (102) formed on the lower electrode layer (103); and an upper electrode layer (101) formed on the resistance change material layer (102). Therefore, an objective of the present invention is to solve instability by using the polyimide having thermal stability as a base material of the resistance change material layer (102).