MANUFACTURING METHOD OF HIGH YEILD RESISTIVE CHANGE MEMORY DEVICE BASED ON POLYIMIDE AND GRAPHENE OXIDE COMPOSITE

摘要

The present invention relates to a method of manufacturing a high-yield resistance variable memory device based on a polyimide and graphene oxide composite material, and more particularly, a lower electrode layer forming step of forming a lower electrode layer on an upper surface of a substrate, the lower electrode layer A resistance change material layer forming step of forming a resistance change material layer on an upper surface of the lower electrode layer formed through the formation step, an annealing step of annealing the laminate on which the resistance change material layer formed through the resistance change material layer formation step is formed, and the It consists of an upper electrode layer forming step of forming an upper electrode layer on the upper surface of the resistance change material layer annealed through the annealing step, and the resistance change material layer is graphene oxide and polyimide surface-modified with 2,6-diaminoanthracene. It is made of a material that is chemically combined. In the above manufacturing method, a solution of a polyamic acid gel containing anthracene is applied as a resistance change material layer, and the process of annealing the resistance change material layer proceeds to show excellent on-off current ratio, durability, and yield. The effect of providing the device is shown.