机译:使用源自二甲基铝的氮氧化铝界面钝化层的HfO_2-GaAs金属氧化物半导体电容器
School of Physics and Materials Science, Anhui University, Hefei 230039, People's Republic of China Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China Anhui Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, People's Republic of China;
rnKey Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China;
rnKey Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China;
rnSchool of Physics and Materials Science, Anhui University, Hefei 230039, People's Republic of China Anhui Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, People's Republic of China;
机译:HfO2-GaAs金属氧化物半导体电容器,使用二甲基氢化铝衍生的氮氧化铝界面钝化层
机译:使用掺Ge的La氧氮化物作为GaAs金属氧化物半导体电容器的界面钝化层
机译:源自二甲基铝的氧氮化铝钝化层对HfTiO-InGaAs栅堆叠的界面化学和能带排列的影响
机译:使用不同厚度的A1_2O_3作为界面钝化层的基于原子层沉积HfO_2的InP n沟道金属氧化物半导体场效应晶体管
机译:通过原子层沉积形成的高k砷化铟金属氧化物半导体电容器。
机译:以La2O3中间层的厚度为特征的HfO2 / Ge MIS电容器的电学性质和界面问题。
机译:NH3等离子体处理的钇氧氮化物作为界面钝化层的GaAs金属氧化物半导体器件的界面质量提高
机译:多层铝氮氧化物电容器,用于更高能量密度,宽温应用(预印本)