Multi-layer, oxynitride layer system with cubic aluminum nitride and aluminum oxynitride on substrate such as hard metal, comprises a first layer, a second layer, an oxygen-containing third layer, and an oxygen-containing oxynitride layer

摘要

The multi-layer, oxynitride layer system with cubic aluminum nitride (AlN) and aluminum oxynitride (AlON) on substrate such as high speed steel and hard metal, comprises: a first layer made of elements such as chromium, aluminum and nitrogen having a layer thickness of 0.1-0.5 mu m; a second layer made of elements such as chromium, aluminum and nitrogen having a layer thickness of 0.3-2.5 mu m; an oxygen-containing third layer made of elements such as chromium, aluminum, oxygen and nitrogen having a layer thickness of 0.3-2.5 mu m; and an oxygen-containing oxynitride layer. The multi-layer, oxynitride layer system with cubic aluminum nitride (AlN) and aluminum oxynitride (AlON) on substrate such as high speed steel and hard metal, comprises: a first layer made of elements such as chromium, aluminum and nitrogen having a layer thickness of 0.1-0.5 mu m; a second layer made of elements such as chromium, aluminum and nitrogen having a layer thickness of 0.3-2.5 mu m; an oxygen-containing third layer made of elements such as chromium, aluminum, oxygen and nitrogen having a layer thickness of 0.3-2.5 mu m; an oxygen-containing oxynitride layer made of elements such as chromium, aluminum, oxygen and nitrogen having a layer thickness of 0.3-2.5 mu m; and an optionally covering layer made of hard material such as titanium aluminum nitride. The second layer, oxygen-containing third layer and oxygen-containing oxynitride layer contain a constant composition of the elements (block-structure), or gradient variation of an element composition (gradient-structure), or alternating change of the composition (multilayer-structure). The oxygen-containing oxynitride layer contains: metallographic phase cubic AlN in a cubic structure; or a metallographic AlON phase having a cubic lattice structure and a layer of composition of such as AlO xN 1-x, where x is = 1; or separate aluminum oxide and cubic AlN crystals. An independent claim is included for a method for preparing layer system.