Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures

摘要

We show that chemical vapor deposition using trisilane decomposition opens capabilities for the deposition of amorphous silicon on Si substrate at low temperature. Based on this behavior we developed a process including amorphous silicon deposition and crystallization. Transmission electron microscopy observations prove that solid phase epitaxy (SPE) occurs and produces monocrystalline layers, free of extended defects and compatible with complementary metal-oxide-semiconductor technology. We also show that during SPE films remain amorphous on oxidized areas while they transform into single crystal on Si. This process opens promising perspectives for the fabrication of advanced MOS structures.