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Solid phase epitaxy activation process for source/drain junction extensions and halo regions
Solid phase epitaxy activation process for source/drain junction extensions and halo regions
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机译:源/漏结扩展和晕圈区域的固相外延激活过程
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摘要
A method of manufacturing an integrated circuit may include the steps of forming a deep amorphous region and doping the deep amorphous region. The doping of the deep amorphous region can form source and drain regions with extensions. After doping, the substrate is annealed. The annealing can occur at a low temperature.
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