Efficient Si Solar Cells by Low-Temperature Solid-Phase Epitaxy

摘要

Solid-phase epitaxial Si layers of uniform thickness have been grown at 400-500 C by transport of Si atoms from an amorphous Si film through an AL film deposited on (100) single crystal or polycrystalline n-type Si substrates. The epitaxial Si layers are strongly p type due to Al doping, and good rectifying junctions are formed between these layers and the substrates. Solar cells with conversion efficiencies at AM1 of 10.4 and 8.5% have been fabricated on (100) Si and polycrystalline Si substrates, respectively, without the use of an antireflection coating or back surface field structure.