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The photoresponsivity of monolayer molybdenum disulfide grown by chemical vapor deposition with different seeding promoters

机译:用不同接种启动子通过化学气相沉积生长单层钼二硫化物的光反对子

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摘要

The performance of photodetectors based on monolayer transition-metal dichalcogenides (TMDCs) varies greatly, even for the same type of devices made of the same material. Here, we compared the performance of phototransistors based on monolayer MoS2 grown by chemical vapor deposition (CVD) with different seeding promoters of perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS), copper phthalocyanine (CuPc), and crystal violet, respectively. The device based on MoS2 grown with PTAS has the highest photoresponsivity. This work implies the selection of seeding promoters during the CVD growth of monolayer TMDCs will affect the photodetectors characteristics, which is very important to their applications in optoelectronics. (C) 2020 The Japan Society of Applied Physics
机译:基于单层过渡 - 金属二甲基甲基化物(TMDC)的光电探测器的性能大大变化,即使对于由相同材料制成的相同类型的装置也是如此。在这里,我们将基于通过化学气相沉积(CVD)生长的单层MOS2的光电晶体管的性能与具有不同播种机的Perylene-3,4,9,10-四羧酸四钾盐(PTA),铜酞菁(CUPC)的不同接种促进剂,和水晶紫色。基于使用PTA生长的MOS2的器件具有最高的光反应性。该作品意味着在单层TMDCS的CVD生长过程中选择播种机的选择将影响光电探测器特性,这对它们在光电子中的应用非常重要。 (c)2020日本应用物理学会

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  • 来源
    《Annales de l'I.H.P》 |2020年第7期|071006.1-071006.6|共6页
  • 作者单位

    Fudan Univ Sch Informat Sci & Technol State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Informat Sci & Technol State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Informat Sci & Technol State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Informat Sci & Technol State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Informat Sci & Technol State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Shanghai Dianji Univ Coll Mat Shanghai 201306 Peoples R China;

    Fudan Univ Sch Informat Sci & Technol State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Informat Sci & Technol State Key Lab ASIC & Syst Shanghai 200433 Peoples R China;

    Fudan Univ Sch Informat Sci & Technol State Key Lab ASIC & Syst Shanghai 200433 Peoples R China|Fudan Univ Acad Engn & Technol Shanghai 200433 Peoples R China;

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