Synthesis of monolayer MoS2 with seed promoters by chemical vapor deposition at low temperature

摘要

In this paper, large area monolayer MoS was prepared with chemical vapor deposition (CVD) utilizing seed promoters, perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA). The process conditions including seed promoter concentration, temperature and the flow rate of carrier gas were optimized, and the obtained MoS is characterized by AFM and optical microscopy. The AFM results show that the thickness of MoS is about 0.7nm, which indicates that the MoS is monolayer. It is found that large area of monolayer MoS may be got at relatively low temperature 650°C with low concentration of PTCDA.