Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration

摘要

We have investigated the impacts of source layer thickness, source impurity concentration and channel thickness in a bilayer tunneling field-effect transistor with a thin-film hetero tunneling junction on electrical characteristics. Device simulation has revealed that thinning of the source layer significantly degrades on-state current (I-on) due to non-uniform band-to-band tunneling over the tunneling junction, while channel layer thinning is effective for increasingI(on). On the other hand, source/channel impurity concentrations of around 3 x 10(18) cm(-3)are found to be optimal for highI(on), highI(on)/I(off)and suppression of transfer characteristic shifts with changingV(d).