Deformation Induced Holes In Ge-rich Sige-on-insulator And Ge-on-insulator Substrates Fabricated By Ge Condensation Process

摘要

Electrical properties of Ge-rich SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) structures fabricated by Ge condensation process have been studied. The SGOI and GOI structures for Ge composition, X_(Ge), larger than 0.4 exhibit p-type conduction. The hole density is found to rapidly increase from 10~(16) to 10~(18)cm~(-3) with an increase in X_(Ge) during the Ge condensation and to decrease down to low-10~(17)cm~(-3) when X_(Ge) reaches unity. Analyses of scanning spreading resistance microscopy have directly revealed that the SGOI and GOI structures are highly conductive along the crosshatched slip bands formed during the condensation, meaning that the holes are induced along the slip bands in SGOI and GOI films. As a result, it is concluded that the hole induced during the Ge condensation is strongly associated with the slip band formation.