Rear Side Passivated Monocrystalline Silicon Thin Film Solar Cells with Laser Fired Contact Process

摘要

Monocrystalline silicon (c-Si) thin film solar cells based on transfer technique are promising for reduction of silicon material consumption and cost. In this paper, we present the rear passivated type 15-μm-thick c-Si thin film solar cells using the laser fired contact (LFC). After separation, the rear side process using transfer technique is maintained at below 200 ℃. We applied NH3 plasma-treatment technique before SiN_x deposition and LFC technique that fire through rear contact and passivation layers using laser irradiation to the rear surface of c-Si thin film solar cells. As a result, in the solar cell performance, V_(OC) of 533 and 553 mV have been achieved for the rear non-passivated cell and the rear SiN_x passivated cell, respectively. The rear surface passivation using NH_3 plasma-treatment has an effect on the increasing of V_(OC). For the internal quantum efficiency (IQE) results, the rear SiN_x passivated cell increased by over 15% compared to the rear non-passivated cell in the long wavelength region. The high potential of rear passivated c-Si thin film solar cells have been illustrated in this study.