Formation and suppression of hydrogen blisters in tunnelling oxide passivating contact for crystalline silicon solar cells

摘要

Optical images of the surface of ( ) a-Si:H/c-Si and ( ) a-Si:H/SiO /c-Si structures. SEM images of ( ) a-Si:H/SiO /c-Si structures annealed at 600, 700, and 800 °C. CMP-treated semiconductor-grade c-Si was used as the substrate.