机译:InGaN / GaN量子阱表征的荧光显微镜测量中的定制滤光片立方
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara,Santa Barbara, CA 93106-5055, U.S.A.;
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara,Santa Barbara, CA 93106-5055, U.S.A.;
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara,Santa Barbara, CA 93106-5055, U.S.A.;
Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan;
Japan Pionics Co., Ltd., Hiratsuka, Kanagawa 254-0013, Japan;
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara,Santa Barbara, CA 93106-5055, U.S.A.;
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara,Santa Barbara, CA 93106-5055, U.S.A.;
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara,Santa Barbara, CA 93106-5055, U.S.A.;
Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara,Santa Barbara, CA 93106-5055, U.S.A.;
机译:磁场和测量温度对Eu掺杂InGaN / GaN量子阱结构的微光致发光光谱形状的影响
机译:高效交错式530 nm InGaN / InGaN / GaN量子阱发光二极管
机译:具有和不具有n-InGaN电子存储层的蓝色InGaN / GaN量子阱二极管的电致发光效率
机译:蓝色InGaN / GaN量子阱异质结双极发光晶体管的特性
机译:发射蓝光的InGaN / GaN MQW中不均匀性的光学表征。
机译:InGaN / GaN量子阱结构中的表面等离子体激元耦合动力学和辐射效率的提高
机译:具有和不具有n-InGaN电子存储层的蓝色InGaN / GaN量子阱二极管的电致发光效率
机译:用于GaN,GaN / alGaN和GaN / InGaN核壳纳米线中少数载流子扩散的无接触测量的传输成像。