Experimental Staggered-Source and N+ Pocket-Doped Channel III-V Tunnel Field-Effect Transistors and Their Scalabilities

摘要

In this paper, we experimentally demonstrate 100% enhancement in drive current (/_(on)) over ln_(0.53)Ga_(0.47)As n-channel home-junction tunnel field-effect transistor (TFET) by replacing ln_(0.53)Ga_(0.47)As source with a moderately staggered and lattice-matched GaAs_(0.5)Sb_(0.5). The enhancement is also compared with lno.53Gao.47As N+ pocket (δ)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (λ_(eff)) 'or the double gate, thin-body configuration of the staggered heterojunction and δ-doped channel TFETs. The extracted λ_(eff) is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability.