GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

摘要

We report the first demonstration of III-nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal-organic chemical vapor deposition (MOCVD). For the TJs, n(++)-GaN was grown on in-situ activated p(++)-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of similar to 15 mA (10 kA/cm(2)), a threshold voltage of 7.8 V, a maximum output power of 319 mu W, and a differential efficiency of 0.28%. (C) 2018 The Japan Society of Applied Physics