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首页> 外文期刊>Advanced Materials >Flexible Crossbar-Structured Resistive Memory Arrays on Plastic Substrates via Inorganic-Based Laser Lift-Off
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Flexible Crossbar-Structured Resistive Memory Arrays on Plastic Substrates via Inorganic-Based Laser Lift-Off

机译:通过基于无机的激光剥离技术在塑料基板上构建灵活的纵横制电阻存储阵列

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摘要

Flexible electronics have been extensively investigated in hopes of realizing system-on-plastic (SoP) applications as the next-generation technology in various areas, ranging from consumer electronics to bio-integrated medical devices. Flexible memory in particular is regarded as an integral component for SoP applications because of its crucial role in data processing, storage, and communications with external devices. A number of research groups have explored a variety of organic-based flexible memories including flash memory, ferroelectric memory, and resistive memory, directly fabricated at relatively low temperature on flexible substrates using spin-coating, roll-to-roll, and other processes. Although these organic-based flexible memories have been well-established with the capability of achieving flexible electronics over large areas in a cost-effective manner, there are still big challenges in developing high-density flexible memory with high performance, including how to resolve insufficient performance arising from inherent material properties and the non-compatibility with complementary metal-oxide-semiconductor (CMOS) processes.
机译:柔性电子已被广泛研究,希望将塑料系统(SoP)应用实现为从消费电子到生物集成医疗设备等各个领域的下一代技术。特别是,由于柔性存储器在数据处理,存储和与外部设备的通信中起着至关重要的作用,因此它被视为SoP应用程序不可或缺的组成部分。许多研究小组已经探索了各种基于有机的柔性存储器,包括闪存,铁电存储器和电阻式存储器,这些材料是在较低的温度下通过旋涂,卷对卷和其他工艺直接在柔性基板上制造的。尽管这些基于有机物的柔性存储器已经建立了良好的能力,能够以经济有效的方式在大范围内实现柔性电子产品,但是在开发高性能的高密度柔性存储器方面仍然存在着巨大的挑战,包括如何解决不足的问题。由于固有的材料特性以及与互补金属氧化物半导体(CMOS)工艺不兼容而产生的性能。

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  • 来源
    《Advanced Materials》 |2014年第44期|7480-7487|共8页
  • 作者单位

    Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

    Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea;

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