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The Potentiodynamic Bottom-up Growth of the Tin Oxide Nanostructured Layer for Gas-Analytical Multisensor Array Chips

机译:气体分析多传感器阵列芯片的氧化锡纳米结构层的势能自下而上生长。

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摘要

We report a deposition of the tin oxide/hydroxide nanostructured layer by the potentiodynamic method from acidic nitrate solutions directly over the substrate, equipped with multiple strip electrodes which is employed as a gas-analytical multisensor array chip. The electrochemical synthesis is set to favor the growth of the tin oxide/hydroxide phase, while the appearance of metallic Sn is suppressed by cycling. The as-synthesized tin oxide/hydroxide layer is characterized by mesoporous morphology with grains, 250–300 nm diameter, which are further crystallized into fine SnO2 poly-nanocrystals following heating to 300 °C for 24 h just on the chip. The fabricated layer exhibits chemiresistive properties under exposure to organic vapors, which allows the generation of a multisensor vector signal capable of selectively distinguishing various vapors.
机译:我们报告了通过电位动力学方法从酸性硝酸盐溶液直接在基板上沉积氧化锡/氢氧化物纳米结构层的方法,该基板配备有多个带状电极,被用作气体分析多传感器阵列芯片。电化学合成被设定为有利于氧化锡/氢氧化物相的生长,同时通过循环抑制了金属Sn的出现。刚合成的氧化锡/氢氧化锡层的特征是具有250-300 nm直径的晶粒的中孔形貌,仅在芯片上加热至300°C 24 h后,它们便进一步结晶为细的SnO2多纳米晶体。所制造的层在暴露于有机蒸气下表现出化学性质,这允许生成能够选择性地区分各种蒸气的多传感器矢量信号。

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