首页> 外国专利> Making semiconductor chips involves building up semiconductor layers, applying metal plating to epitaxial growth substrate and depositing metal layer galvanically before structuring and separating layers into individual chips

Making semiconductor chips involves building up semiconductor layers, applying metal plating to epitaxial growth substrate and depositing metal layer galvanically before structuring and separating layers into individual chips

机译:制作半导体芯片涉及建立半导体层,在外延生长基板上进行金属镀层以及在将层结构化和分离成单个芯片之前进行电沉积

摘要

The method involves building up the semiconductor layers (2) through an epitaxial growth substrate (1), applying a metal plating (3) to the layers, depositing a metal layer (4) which can contain gold, silver or copper, galvanically onto the metal plating and then structuring and separating out the layers into individual semiconductor chips (6). Independent claim describes semiconductor component having at least one semiconductor chip made in layers and coated with a metal plating.
机译:该方法包括通过外延生长衬底(1)来构造半导体层(2),在这些层上施加金属镀层(3),将可以包含金,银或铜的金属层(4)电沉积到金属层上。金属镀层,然后将各层结构化并分离成单独的半导体芯片(6)。独立权利要求描述了一种半导体组件,该半导体组件具有至少一个半导体芯片,该半导体芯片成层地制成并涂覆有金属镀层。

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