金－硅共晶键合技术及其应用

摘要

采用金属过渡层来实现硅－硅低温键合，首先介绍了选择钛金作为金属过渡层的原因和金硅共晶键合的基本原理，然后探索了不同键合面积和不同金层厚度对金硅共晶键合质量的影响规律，开展了图形化的硅晶圆和硅盖板之间的低温共晶键合实验研究，获取了最优键合面积的阈值和最优金层厚度。最后将该低温金硅共晶键合技术应用到MEMS器件圆片级封装实验中，实验结果表明较好地实现了MEMS惯性器件的封装强度，但是还存在密封性差的缺陷，需进一步进行实验改进。%In this paper, metal medium was adopted to realize the low temperature Si-Si bonding.First, the reason for choosing Ti/Au as metal medium was presented , and the principle of Au-Si eutectic bond-ing was introduced .Then the effect of bonding area and metal thickness on Au-Si eutectic bonding quality was explored .The low temperature eutectic bonding between patterned silicon wafer and smooth silicon wafer was researched by experiment .The best bonding area and the optimal metal thickness were obtained .At last , the low temperature eutectic bonding technology was applied in the MEMS wafer level package .Results show that the low temperature eutectic bonding technology can satisfy the bonding strength of MEMS inertial devices .However , the leakproofness of bonding was not enough , which needs to be further improved .