量子阱混杂对AlGaInP/GaInP有源区光致发光特性的影响

摘要

This paper deals with the influencing law of spectrum behaviors of quantum well intermixing induced by Zn impurity diffusion at the different temperature in AlGalnP/GalnP active regions. It is found that when the diffusion temperature increases from 520℃ to 580℃ with the diffusion time kept for 20 minutes, the blue shifts in the PL wavelength for the diffusion windows of the LD wafer changed from 13 nm to 65 nm with the corresponding peak intensity decreases, while the FWHMs of the spectra changed complicatedly with either increase or decrease. Photoluminescence of the active region is found to have the catastrophical damages at higher Zn diffusion temperatures and longer diffusion time.%研究了不同扩散温度下Zn杂质扩散诱导量子阱混杂对AlGaInP/GaInP有源区发光特性的影响规律.当扩散时间为20 min时随着扩散温度从520℃升高到580℃,激光器外延片扩散窗口处的光致发光谱波长蓝移量从13 nm增加到65 nm,且相对发光强度减小,但PL谱的半高宽变化复杂,既有增加又有减小.较高温度和较长时间的扩散条件会对有源区的发光特性造成灾变性破坏.