Study of N ions implantation induced quantum well intermixing in GaInP/AlGaInP quantum well structures

摘要

N ions implantation induced quantum well intermixing in GaInP/AlGaInP triple quantum-well laser structures was firstly reported in this work. N ions were implanted with the energy of 40 keV and dose of 1e17 ions/cm(2), and thereafter rapid thermal annealing process were performed at 750 degrees C from 40 s to 200 s to induce the intermixing. The photoluminescence wavelength blue-shifts were found increased with the increasing time and the largest blue-shift of 54.9 nm was obtained for 200 s annealing. Surface morphology results shows that the photoluminescence improvement in the annealing samples came from the restoration effect of the layer crystal and hetero-structure interfaces. X-ray photoelectron spectroscopy tests shows that the implanting N ions tend to form Ga-N bonding besides generating point defect to induce quantum well intermixing. (C) 2015 Elsevier B.V. All rights reserved.