Comparative study of laser- and ion implantation-induced quantum well intermixing in GaInAsP/InP microstructures

摘要

Abstract: Laser-induced quantum well intermixing (laser-QWI) and ion implantation-induced quantum well intermixing (II-QWI) techniques have been studied to selectively modify the optical properties of GaInAsP/InP laser microstructures. Following the annealing with a cw Nd:YAG laser, a blue shift in the quantum well photoluminescence of up to 124 nm was observed for samples annealed up to 4 min. A comparison of the laser annealing results with those of II-QWI, which were obtained for the same GaInAsP/InP microstructure, indicates that laser- QWI yields material with comparable, or better optical properties. The one-step processing used in the laser-QWI approach makes it an attractive alternative in fabricating photonic integrated circuits at low cost. !18