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Broadspectrum InGaAs/InP Quantum Well Infrared Photodetector via Quantum Well Intermixing

机译：通过量子阱混合的宽谱InGaas / Inp量子阱红外光电探测器

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摘要

We have demonstrated red shifting and broadening of the wavelength response of a bound-to-continuum ultra-thin p-type InGaAs/InP quantum well infrared photodetector (QWIP) after growth via quantum well intermixing.

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Sengupta, D.; Chang, Y. C.; Stillman, G.;
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年度 1998
页码 1-29
总页数 29
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
ANNEALING; CONTINUUMS; DARK CURRENT; INDIUM GALLIUM ARSENIDES; INDIUM PHOSPHIDES; INFRARED RADIATION; PHOTOMETERS; QUANTUM EFFICIENCY; QUANTUM WELLS; RED SHIFT; annealing; red shift peak response multiple quantum well dark current characteristics; absolute response quantum efficiency quantum well intermixing rapid thermal;

机译：退火;连续体;黑暗的当前;铟镓砷;铟磷;红外辐射;光度计;量子效率; QUaNTUm WELLs;红移;退火;红移峰值响应多量子阱暗电流特性;绝对响应量子效率量子阱混合快速热;

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专利

1. InGaAsP/InP integrated waveguide photodetector pair using quantum well intermixing [J] . Viswas Sadasivan, Shikha Dagar, Tathagata Bhowmick Optical and quantum electronics . 2016,第8期

机译：使用量子阱混合的InGaAsP / InP集成波导光电探测器对
2. Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP [J] . J. Yuan, B. Chen, A.L. Holmes Jr Electronics Letters . 2011,第20期

机译：基于InGaAs / GaAsSb量子阱与InP晶格匹配的未冷却光电探测器的近红外量子效率
3. Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors [J] . McKerracher I., Wong-Leung J., Jolley G., Quantum Electronics, IEEE Journal of . 2011,第5期

机译：InGaAs / GaAs量子点红外光电探测器的选择性混合
4. Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells [C] . Sichao Du, L. Fu, H. H. Tan, International Conference on Nanoscience and Nanotechnology . 2008

机译：ingaAsp / Ingaas / InP和Inalgaas / Ingaas / InP量子阱中晶体和砷植入诱导诱导的质子和砷植入植入的比较
5. Infrared focal plane array based on gallium indium arsenideGaInAs/InP quantum well infrared photodetectors [D] . Jiang, Jutao 2004

机译：基于砷化镓铟GaInAs / InP量子阱红外光电探测器的红外焦平面阵列
6. Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing [O] . S Mokkapati, Sichao Du, M Buda, 2007

机译：离子注入诱导混合的多波长InGaAs量子点激光器
7. Intermixing in strained InGaAs/GaAs quantum-well infrared photodetectors [O] . Lee ASW, Li EH, Karunasiri G 1999

机译：应变InGaas / Gaas量子阱红外光电探测器的混合
8. Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector [R] . Sengupta, D. K., Gunapala, S. D., Bandara, S. V., 1998

机译：带隙移动超薄InGaas / Inp量子阱红外光电探测器

Broadspectrum InGaAs/InP Quantum Well Infrared Photodetector via Quantum Well Intermixing

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