The active region of the multiplex quantum well structure which

摘要

This invention regards the light-emitting diode which possesses modulation doping formation (LED). The light-emitting diode includes, the active region of the multiplex quantum well structure which includes n die contact formation and p die contact formation and InGaN well formation and. Here, n die contact formation includes, the 2nd modulation doping formation where 1st modulation doping formation and the n die impurity dopes InGaN formation and the undope InGaN formation where InGaN formation and the undope InGaN formation where the n die impurity dopes are laminated alternately are laminated alternately and. In addition, each InGaN formation of 1st modulation doping formation composition is identical mutually, each InGaN formation of 2nd modulation doping formation composition is identical mutually. Furthermore, 2nd modulation doping formation is laid out with 1st modulation doping formation and the active region, the n electrode contacts aforementioned 1st modulation doping formation. It prevents the fact that process time becomes long, 1st modulation doping formation and by using 2nd modulation doping formation, it is possible to make the strain ease which is induced inside multiplex quantum well structure. Choice figure Drawing 2