Hydrogen,in its various forms (molecular hydrogen,atomic hydrogen or hydrogen anions), has an important and sometimes critical impact on the ionization damage behavior of electron device. This affects the radiation resistance of the device. In the paper,defect evolution of the irradiated Gated Lateral PNP(GLPNP) transistors by 1 MeV electrons in air and H2 environment is researched. Electric performance parameters including the base current versus gate voltage Gate Sweep(GS) and Gummel curves are measured immediately in-situ using KEITHLEY 4200-SCS semiconductor parameter measurement system. The relationship between performance degradation and electron irradiation fluence,and hydrogen concentration is studied. Defect evolution of the irradiated GLPNP transistors by 1 MeV electrons in H2 environment is researched by GS and Deep Level Transient Spectroscopy(DLTS) techniques. Results show that compared with that in air,the base current of the GLPNP soaked in H2 is significantly increased by the 1 MeV electrons, while collector current is obviously decreased. In the case, more oxide charges and interface states are produced. These phenomena indicate that molecular hydrogen aggravates ionization damage of the GLPNP bipolar transistor.%无论氢在电子器件内部以何种形式(H2分子、H原子或H+离子)存在,均会对电子器件电离损伤产生作用,进而影响器件的抗辐照能力.本文深入研究了氢气和空气气氛条件下1 MeV电子辐照栅控横向PNP(GLPNP)型双极晶体管的辐射损伤缺陷演化行为.利用Keithley 4200SCS半导体参数测试仪对不同气氛下辐照过程中晶体管进行在线原位电性能参数测试,研究晶体管电性能退化与电子辐照注量和氢气深度之间的关系;基于栅扫技术(GS)和深能级瞬态谱技术(DLTS),研究双极晶体管中氢诱导电离损伤缺陷演化的基本特征.研究表明,与空气气氛相比,氢气气氛下电子辐照导致GLPNP的基极电流增加显著,而集电极电流明显降低,产生更多的氧化物电荷和界面态,这些现象均说明氢气加剧双极晶体管的电离辐射损伤.
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