低导通电阻沟槽栅极LIGBT的模拟研究

摘要

横向绝缘栅双极晶体管(LIGBT)采用少数载流子的注入来降低导通电阻,完成了5μm外延层上普通LIGBT(C - LIGBT)、3μm外延层上的Trench Gate LIGBT( TG - LIGBT)设计及仿真.研究了利用沟槽结构改善LIGBT的正向特性和利用RESURF技术改善TG - LIGBT的反向特性.通过Silvaco TCAD软件验证了了击穿电压大于500 V的两种结构LIGBT设计,实现了导通压降为1.0V,薄外延层上小元胞尺寸,且有低导通电阻、大饱和电流的TG-LIGBT器件.%LIGBT has the advantage of very low on-resistance because of minority carriers injection. The optimization and simulation of this article is completed within two structures; 5 μm conventional LIGBT( C-LIGBT) and 3 μm Trench Gate LIGBT (TG-LIGBT) with epitaxial layer. The purpose of this thesis is to improve on-state performance based on trench gate and off-state performance through RESURF. Two over 500 V breakdown voltage LIGBT are investigated under the Silvaco TCAD software. A lower on-state resistance TG-LIGBT has been realized in cell-size thin epitaxial layer under 1. 0 V of forward voltage. Moreover, TG-LIGBT exploits the structure of trench electrode to decrease chip size in forward voltage circumstance.