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Power trench gate FET with active gate trenches that are contiguous with gate runner trench
Power trench gate FET with active gate trenches that are contiguous with gate runner trench
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机译:具有与栅极流道沟槽相邻的有源栅极沟槽的功率沟槽栅极FET
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摘要
A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has a width greater than a width of each of the plurality of active gate trenches, and (ii) the plurality of active gate trenches are contiguous with the at least one gate runner trench.
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