Influence of Gate Connection Modes on Trade-offs in Trench Gate U-shaped Channel SOI-LIGBT

摘要

The influence of gate connection modes in the trench gate U-shaped (TGU) SOI-LIGBTs is investigated in this paper. The TGU SOI-LIGBT features a U-shaped gate trench (G1) and a U-shaped hole barrier trench (G2). In conventional gate connection mode, G2 and G1 are shorted and controlled by the gate signal synchronously. This mode results in a poor dv/dt (di/dt) controllability during the device turn-on. An excellent dv/dt (di/dt)-EON trade-off without affecting the E_OFF-V_ON trade-off can be achieved through applying a novel gate connection mode with pre-charged G2.