分子束外延法制备ZnTe薄膜及ZnTe∶O薄膜光学特性研究

摘要

ZnTe:O高失配合金半导体是实现中间带太阳电池的有效途径,其制备通过如下几步实现:1)分子数外延(MBE)设备进行ZnTe单晶生长;2)将分子束外延制备的单晶ZnTe进行离子束注入;3)通过快速激光退火处理来实现ZnTe晶体质量的提升,修复晶格损伤.MBE所获得的最优晶体质量的条件是Zn源温控制在260℃,Te源温控制在290℃.掺杂O为1.25×1021cm-3时,所获得的中间带效果最好,并且在经过激光快速退火处理后,中间带的强度显著提升.%ZnTe:O highly mismatched alloys is an effective way to achieve intermediate band solar cell.The fabrication of ZnTe:O is as follows:(a) the growth of ZnTe single crystal by molecular beam epitaxy;(b) the implantation of O ions to ZnTe;? the rapid annealing by pulsed laser to improve the quality of ZnTe single crystal and repair the crystal damage.The best condition to get ZnTe with high quality is to fix the temperature of Zn and Te at 260 ℃ and 290 ℃,respectively.When the O concentration is 1.25 × 1021 cm-3,the intermediate band reaches its peak and its intensity is obviously enhanced after the pulsed laser annealing.