湿法刻蚀应对圆片减薄后翘曲问题的探讨

摘要

With the development of micro-electronic industry, the diameter of wafer is becoming larger and larger, and the thickness is becoming thinner and thinner. Some problems we did not concern originally, gradually stand out now. When silicon wafers in 150 mm, 200 mm, or even 300 mm are ground to 200 μm or even less than 200 μm, the rigidity of their own will not be strong enough to keep the straight status of the original formation. This paper starts from the appearance of the warping problem after wafer grinding, analyzes the basic reason which caused the warp issue, and removes the backside damage layer by the wet-etching tech, thus improves the warping problem after grinding.%随着微电子产业的发展，圆片直径越来越大、厚度越来越薄。一些本来不被关注的问题逐渐凸现出来。当150 mm、200 mm甚至300 mm的圆片被减薄到200μm或者200μm以下时，圆片本身的刚性将慢慢变得不足以使其保持原来平整的状态。文章从圆片减薄后产生翘曲的直观表象入手，分析了产生翘曲问题的根本原因，采用湿法刻蚀的方式去除了圆片因减薄形成的背面损伤层，改善了圆片减薄后的翘曲问题。