高阻薄层硅外延材料研制

摘要

According to the technical requirements of the vast majority of discrete devices, the resistivity of conventional silicon epitaxial layer is lower than the value of the thickness. The paper introduces the practical production technology of a kind of high resistance thin thickness silicon epitaxial material whose resistivity value is close to or even higher than the thickness, namely high resistance thin thickness silicon epitaxial growth on the substrate doped. As with the special process method on the PE-2061s barrel type equipment. Through controlling the auto-doping,the process improves the vertical distribution of carriers concentration and obtains better uniformity of epitaxial parameters.%根据绝大多数分立器件的技术要求，常规硅外延层电阻率的数值会小于厚度的数值。介绍了一种外延层电阻率数值接近甚至大于厚度数值的高阻薄层硅外延材料的实用生产技术，即在PE-2061S桶式外延设备上，采取特殊的工艺方法，在掺砷（As）衬底上进行高阻薄层外延生长。该工艺通过控制自掺杂，改善了纵向载流子浓度分布，取得了较好的外延参数均匀性。