Développement de procédés plasma pour l'élaboration et la caractérisation du silicium photovoltaïque : dépôt de couches minces épitaxiées de silicium par PECVD : mesure de la pureté du silicium à l'état solide ( 20°C) et liquide (1414°C) par LIBS

摘要

Today, the main limiting factor of PV is the high price of electricity production by the PV modules. To cope with this difficulty, current researches focus on several ways and alternatives solutions: reducing energy costs including reducing the cost of the raw material, which consists in reducing the thickness of silicon wafers or in the development of cells in thin silicon layers. The latter process is intended to overcome the sawing step of silicon ingots which is necessary for the realization of photovoltaic wafer. It is this very approach that led us to develop a method to prepare thin films by using plasma and heating the substrate. Moreover, whatever the method chosen to achieve the required crystallinity and purity for solar grade, it is necessary to have a multi-elements analytical technique to control the evolution of purity. In our laboratory, we have developed LIBS which can meet these expectations, i-e very low detection limits while allowing online tracking of silicon in solid or liquid state.