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多芯片LED器件热学特性分析

         

摘要

由于芯片之间存在的热耦合效应,多芯片LED器件内部存在复杂热学规律.本文通过多芯片LED热学模型描述多芯片LED器件系统内部热阻支路路径,进而通过有限体积数值计算多芯片LED器件结温.通过本文试验验证,单颗芯片、2颗芯片、3颗芯片以及4颗芯片在负载不同电功率(0.3~1.2 W)情况下,结温的测试值和计算值的最小误差值为0.8%,最大误差值为6.8%,平均误差值为3.4%,计算结果与测试结果基本保持一致,因此有利论证了多芯片LED热学模型可为评价多芯片LED器件热学性能提供重要的参考作用,有助于更全面分析多芯片LED热阻内部芯片之间的热耦合效应.该实验结果为准确预测多芯片LED器件内部结温提供了重要理论依据.%A multichip LED device has complex interaction and mechanism due to thermal coupling effect. An estimation method for the thermal network model of the multichip LED device based on multichip thermal model was proposed in this paper. The predicted junction temperature in finite volume method was applied to the multichip LED device. The minimum, maximum and average de-viations of junction temperature between the proposed model and the measurement are about 0 . 8%, 6. 8% and 3. 4%, respectively. The calculated results are in good agreement with the measure-ments. These results confirm that the multichip thermal model with finite volume method can provide accurate predictions for junction temperature. The work offers a new research and development tool for practicing LED designers to accurately predict the junction temperature of LED system.

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